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Figure 2 - TLP plot and dynamic resistance of an Infineon TVS diode compared to ceramic
multilayer varistors (MLV). TLP parameters: 50 ? , 30ns pulse width, 0.6ns pulse rise time.
devices are suited to protect exposed pins in applications
having signal voltage levels swinging around zero as well
as those lines with unipolar voltage levels. All Infineon TVS
diodes protect against ESD strikes in both positive and
negative directions.
As with other Infineon’s TVS diodes, all these products
endure multi-ESD strikes without requiring supplementary
components. In terms of ESD absorption capability these
devices are specified to exceed the toughest industry stan-
dard IEC61000-4-2 level 4 (see Table 1).
Miniature Designs with World’s Smallest TVS Diodes
Available in 0201 and 0402 EIA-equivalent packages, the-
se TVS diodes measure just 0.62 x 0.32 mm for TSSLP-2
(thin super-small leadless package) and 1.00 x 0.60 mm
for TSLP-2 (thin small leadless package). See Figure 1.
Because of their small size with underneath electrode pad
design these devices boast true space savings in highly
populated PCB boards.
Package height is a key element in the design of modern
electronic equipment. With only 0.39 mm (0402) and
0.31mm (0201) thickness these packages are the solution
of preference for many major manufacturers of slim electro-
nics.
TSSLP-2 and TSLP-2 diode packages are ROHS and
Halogen-Free compliant. They are suited for all variations
of pick-and-place assembly.
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